Segmented Pillar Layout for a High-Voltage Vertical Transistor

ABSTRACT

In one embodiment, a transistor fabricated on a semiconductor die includes a first section of transistor segments disposed in a first area of the semiconductor die, and a second section of transistor segments disposed in a second area of the semiconductor die adjacent the first area. Each of the transistor segments in the first and second sections includes a pillar of a semiconductor material that extends in a vertical direction. First and second dielectric regions are disposed on opposite sides of the pillar. First and second field plates are respectively disposed in the first and second dielectric regions. Outer field plates of transistor segments adjoining first and second sections are either separated or partially merged.

This application is a continuation of application Ser. No 12/455,462,filed Jun. 2, 2009, now U.S. Pat. No. 8,552,493, which is a continuationof application Ser. No.: 11/707,406, filed Feb. 16, 2007, now U.S. Pat.No. 7,557,406, entitled, “SEGMENTED PILLAR LAYOUT FOR A HIGH-VOLTAGEVERTICAL TRANSISTOR”, each of which is assigned to the assignee of thepresent application.

TECHNICAL FIELD

The present disclosure relates to semiconductor device structures andprocesses for fabricating high-voltage transistors.

BACKGROUND

High-voltage, field-effect transistors (HVFETs) are well known in the esemiconductor arts. Many HVFETs employ a device structure that includesan extended drain region that supports or blocks the appliedhigh-voltage (e.g., several hundred volts) when the device is in the“off” state. In a conventional vertical HVFET structure, a mesa orpillar of semiconductor material forms the extended drain or driftregion for current flow in the on-state. A trench gate structure isformed near the top of the substrate, adjacent the sidewall regions ofthe mesa where a body region is disposed above the extended drainregion. Application of an appropriate voltage potential to the gatecauses a conductive channel to be formed along the vertical sidewallportion of the body region such that current may flow vertically throughthe semiconductor material, i.e., from a top surface of the substratewhere the source region is disposed, down to the bottom of the substratewhere the drain region is located.

In a traditional layout, a vertical HVFET consists of long continuoussilicon pillar structure that extends across the semiconductor die, withthe pillar structure being repeated in a direction perpendicular to thepillar length. One problem that arises with this layout, however, isthat it tends to produce large warping of the silicon wafer during hightemperature processing steps. In many processes, the warping ispermanent and large enough to prevent the wafer from tool handlingduring subsequent processing steps.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will be understood more fully from the detaileddescription that follows and from the accompanying drawings, whichhowever, should not be taken to limit the invention to the specificembodiments shown, but are for explanation and understanding only.

FIG. 1 illustrates an example cross-sectional side view of verticalHVFET structure.

FIG. 2A illustrates an example layout of the vertical HVFET structureshown in FIG. 1.

FIG. 2B is an expanded view of one portion of the example layout shownin FIG. 2A.

FIG. 3A illustrates another example layout of the vertical HVFETstructure shown in FIG. 1.

FIG. 3B is an expanded view of one portion of the example layout shownin FIG. 3A.

FIG. 4A illustrates yet another example layout of the vertical HVFETstructure shown in FIG. 1.

FIG. 4B is an expanded view of one portion of the example layout shownin FIG. 4A.

FIGS. 5-7 are further example layouts of a vertical HVFET structureshowing transistor segments arranged in sections, with adjacent sectionsbeing oriented orthogonally in first and second lateral directions.

DETAILED DESCRIPTION

In the following description specific details are set forth, such asmaterial types, dimensions, structural features, processing steps, etc.,in order to provide a thorough understanding of the present invention.However, persons having ordinary skill in the relevant arts willappreciate that these specific details may not be needed to practice thepresent invention. It should also be understood that the elements in thefigures are representational, and are not drawn to scale in the interestof clarity.

FIG. 1 illustrates an example cross-sectional side view of a verticalHVFET 10 having a structure that includes an extended drain region 12 ofN-type silicon formed on an N+ doped silicon substrate 11. Substrate 11is heavily doped to minimize its resistance to current flowing throughto the drain electrode, which is located on the bottom of the substratein the completed device. In one embodiment, extended drain region 12 ispart of an epitaxial layer that extends from substrate 11 to a topsurface of the silicon wafer. A P-type body region 13 and N+ dopedsource regions 14 a & 14 b laterally separated by a P-type region 16,are formed near a top surface of the epitaxial layer. As can be seen,P-type body region 13 is disposed above and vertically separatesextended drain region 12 from N+ source regions 14 a & 14 b and P-typeregion 16.

In one embodiment, the doping concentration of the portion of epitaxiallayer which comprises extended drain region 12 is linearly graded toproduce an extended drain region that exhibits a substantially uniformelectric-field distribution. Linear grading may stop at some point belowthe top surface of the epitaxial layer 12.

Extended drain region 12, body region 13, source regions 14 a & 14 b andP-type region 16 collectively comprise a mesa or pillar 17 (both termsare used synonymously in the present application) of silicon material inthe example vertical transistor of FIG. 1. Vertical trenches formed onopposite sides of pillar 17 are filled with a layer of dielectricmaterial (e.g., oxide) that makes up dielectric region 15. The heightand width of pillar 17, as well as the spacing between adjacent verticaltrenches may be determined by the breakdown voltage requirements of thedevice. In various embodiments, mesa 17 has a vertical height(thickness) in a range of about 30 μm to 120 μm thick. For example, aHVFET formed on a die approximately 1 mm×1 mm in size may have a pillar17 with a vertical thickness of about 60 μm. By way of further example,a transistor structure formed on a die of about 2 mm-4 mm on each sidemay have a pillar structure of approximately 30 μm thick. In certainembodiments, the lateral width of pillar 17 is as narrow as can bereliably manufactured (e.g., about 0.4 μm to 0.8 μm wide) in order toachieve a very high breakdown voltage (e.g., 600-800V).

In another embodiment, instead of arranging P-type region 16 between N+source regions 14 a & 14 b across the lateral width of pillar 17 (asshown in FIG. 1), N+ source regions and P-type regions may bealternately farmed at the top of pillar 17 across the lateral length ofpillar 17, In other words, a given cross-sectional view such as thatshown in FIG. 1 would have either an N+ source region 14, or a P-typeregion 16, that extends across the full lateral width of pillar 17,depending upon where the cross-section is taken. In such an embodiment,each N+ source region 14 is adjoined on both sides (along the laterallength of the pillar) by P-type regions 16. Similarly, each P-typeregion 16 is adjoined on both sides (along the lateral length of thepillar) by N+ source regions 14.

Dielectric regions 15 a & 15 b may comprise silicon dioxide siliconnitride, or other suitable dielectric materials. Dielectric regions 15may be formed using a variety of well-known methods, including thermalgrowth and chemical vapor deposition. Disposed within each of thedielectric layers 15, and fully insulated from substrate 1 and pillar17, is a field plate 19. The conductive material used to from fieldplates 19 may comprise a heavily doped polysilicon, a metal (or metalalloys), a silicide, or other suitable materials. In the completeddevice structure, field plates 19 a & 19 b normally function ascapacitive plates that may be used to deplete the extended drain regionof charge when the HVFET is in the off state (i.e., when the drain israised to a high voltage potential). In one embodiment, the lateralthickness of oxide region 15 that separates each field plate 19 from thesidewall of pillar 17 is approximately 4 μm.

The trench gate structure of vertical HVFET transistor 80 comprises gatemembers 18 a & 18 b, each respectively disposed in oxide regions 15 a &15 b on opposite sides of pillar 17 between field plates 19 a & 19 b andbody region 13. A high-quality, thin (e.g., ˜500 Å) gate oxide layerseparates gate members 18 from the sidewalls of pillar 17 adjacent bodyregion 13. Gate members 18 may comprise polysilicon, or some othersuitable material. In one embodiment, each gate member 18 has a lateralwidth of approximately 1.5 μm and a depth of about 3.5 μm.

Practitioners in the art will appreciate that N+ source regions 14 andP-type body region 13 near the top of pillar 17 may each be formed usingordinary deposition, diffusion, and/or implantation processingtechniques. After formation of the N+ source region 38, HVFET 10 may becompleted by forming source, drain, gate, and field plate electrodesthat electrically connect to the respective regions/materials of thedevice using conventional fabrication methods (not shown in the figuresfor clarity reasons).

FIG. 2A illustrates an example layout of the vertical HVFET structureshown in FIG. 1. The top view of FIG. 2A shows a single, discrete HVFETcomprising an upper transistor section 30 a and a lower transistorsection 30 b on a semiconductor die 21. The two sections are separatedby a dummy silicon pillar 32. Each section 30 comprises a plurality of“racetrack” shaped transistor structures or segments, each transistorsegment comprises an elongated ring or oval that includes a siliconpillar 17 surrounded on opposite sides by dielectric regions 15 a & 15b. Pillar 17, itself, extends laterally in the x and y directions toform a continuous, elongated, racetrack-shaped ring or oval. Disposedwithin dielectric regions 15 a & 15 b are respective gate members 18 a &18 b and field plates 19 a & 19 b. Field plate 19 a comprises a singleelongated member that terminates on either end in a rounded fingertiparea. Field plate 19 b, on the other hand, comprises an enlarged ring oroval that encircles pillar 17. Field plates 19 b of adjacent racetrackstructures are shown merged such that they share a common member on aside. By way of reference, the cross-sectional view of FIG. 1 may betaken through cut lines A-A′ of the example layout of FIG. 2A.

It should be understood that in the example of FIG. 2A, each of theracetrack transistor segments has a width (Le pitch) in the y-directionof approximately 13 μm, a length in the x-direction in a range of about400 μm to 1000 μm, with a pillar height of about 60 μm. In other words,the length to width ratio of the individual racetrack transistorsegments comprising sections 30 a & 30 b is in a range of about 30 up to80. In one embodiment, the length of each racetrack shaped segment is atleast 20 times greater than its pitch or width.

Practitioners in the art will appreciate that in the completed devicestructure, patterned metal layers are used to interconnect each of thesilicon pillars 17 of the individual transistor segments. That is in apractical embodiment, all of the source regions, gate members, and fieldplates are respectively wired together to corresponding electrodes onthe die. In the embodiment shown, the transistor segments in eachsection 30 are arranged in a side-by-side relationship in they-direction substantially across a width of die 21. Similarly, in thex-direction the additive length of the transistor segments of sections30 a & 30 b extend substantially over the length of die 21. In theexample layout of FIG. 2A the width of dielectric regions 15 separatingthe silicon pillars, as well as the width of the field plates, issubstantially uniform across semiconductor die 21. Laying out thetransistor segments with uniform widths and separation distancesprevents the formation of voids or holes following the processing stepsused to conformably deposit the layers that comprise dielectric regions15 and field plates 19.

FIG. 2B is an expanded view of one portion of the example layout shownin FIG. 2A. For purposes of clarity, only pillars 17 and dielectricregions 15 a & 15 b of each of the transistor segments is represented.Dummy silicon pillar 32 is shown, separating the rounded end areas ofdielectric regions 15 b of respective transistor segment sections 30 a &30 b. In other words, the deep vertical trenches that are etched in thesemiconductor substrate to define pillars 17 also define dummy siliconpillar 32. In one embodiment, dummy silicon pillar 32 is made to have awidth in the x-direction (i.e., that separates the transistor segmentsections) that is as small as can be reliably manufactured.

The purpose of segmenting the single die HVFET into sections separatedby dummy silicon pillar 32 is to introduce lengthwise (x-direction)stress-relief in the elongated racetrack shaped transistor segments.Segmenting or breaking the transistor device structures into two or moresections relieves mechanical stress across the length of the die. Thisstress is induced by the oxide regions flanking the pillars and normallyconcentrates at the rounded ends of each racetrack segment. Relievingmechanical stress by segmenting the transistor device structures intotwo or more sections thus prevents undesirable warping of the siliconpillars and damage (e.g., dislocations) to the silicon caused by stress.

It is appreciated that a tradeoff exists between the stress reliefprovided by a highly segmented layout and loss of conduction area. Moresegmentation results in greater stress relief, but at the expense ofconduction area. In general, the greater the vertical height of thepillars and the larger the semiconductor die, the greater the number oftransistor sections or segments that will be required. In oneembodiment, for a 2 mm×2mm die with 60 μm high pillars, adequate stressrelief is provided in a HVFET with an on-resistance of about lohmutilizing a layout comprising four racetrack transistor sectionsseparated by dummy silicon pillars, each having a pitch (x-direction) ofabout 13 μm and a length (y-direction) of about 450 μm.

In another embodiment, instead of a dummy pillar of silicon to separatepairs of racetrack transistor segments, each pair being located in adifferent section, a dummy pillar comprising a different material may beutilized. The material used for the dummy pillar should have a thermalcoefficient of expansion close to that of silicon, or sufficientlydifferent from that of the dielectric region so as to relieve thelengthwise stress induced by the dielectric regions flanking the siliconpillars.

FIG. 3A illustrates another example layout of the vertical HVFETstructure shown in FIG. 1. FIG. 3B is an expanded view of one portion ofthe example layout shown in FIG. 3A, just showing pillars 17, oxideregion 15 b, and an optional dummy silicon pillar 33. Similar to theembodiment of FIGS. 2A & 2B, FIGS. 3A & 3B show a single, discrete HVFETcomprising an upper transistor section 30 a and a lower transistorsection 30 b on a semiconductor die 21. But in the example of FIGS. 3A &3B, the deep vertical trenches filled with oxide regions 15 b and fieldplates 19 b of transistor sections 30 a and 30 b overlap, or are merged,leaving small, diamond-shaped dummy silicon pillars 33 between thesegmented transistor sections. In this embodiment, a single dummy pillaris centrally located between the four rounded ends of adjacent pairs oftransistor segments over the two sections. In the example shown, forevery N (where N is an integer greater than 1) racetrack segments orstructures in a section 30 of the transistor comprising die 21, thereare a total of N−1 dummy pillars 33.

FIG. 4A illustrates yet another example layout of the vertical HVFETstructure shown in FIG. 1. FIG. 4B is an expanded view of one portion ofthe example layout shown in FIG. 4A. Pillars 17 and oxide region 15 bare just shown for clarity reasons in the expanded view of FIG. 4B. Inthis example, the transistor segments comprising the HVFET ofsemiconductor die 21 are alternately shifted by half of the length ofeach racetrack segment, resulting in racetrack transistor segments thatare alternately associated with upper transistor section 40 a and lowertransistor section 40 b. In other words, each of the transistor segmentsof a row of section 40 a is separated by a pair of the transistorsegments of section 40 b, the pair being arranged in an end-to-endrelationship in the x-direction.

It is appreciated that the alternate shifting of the segments may be anyfraction of the segment length. In other words, shifting of the segmentsis not limited to 50% or half the length. Various embodiments maycomprise segments alternately shifted by any percentage or fractionranging from greater than 0% to less than 100% of the length of thetransistor segments.

In the example of FIGS. 4A & 4B, the dielectric regions 15 b ofalternating ones of the transistor segments in respective sections 40 a& 40 b are merged. In the specific embodiment shown, the rounded ends ofthe transistor segments associated with different adjacent sectionsoverlap or are merged such that field plates 19 b of the adjacentsections are merged at the ends (in the x-direction). Also, the extendedstraight side portions of field plates 19 b of alternating transistorsegments of different sections are merged along a substantial length ofeach segment. It is appreciated that regions 15 b and 19 b may be mergedwith or without a dummy pillar (or isolated dummy silicon pillars)between the respective sections.

Although the above embodiments have been described in conjunction with aspecific device types, those of ordinary skill in the arts willappreciate that numerous modifications and alterations are well withinthe scope of the present invention. For instance, although HVFETs havebeen described, the methods, layouts and structures shown are equallyapplicable to other structures and device types, including Schottky,diode, IGBT and bipolar structures. Accordingly, the specification anddrawings are to be regarded in an illustrative rather than a restrictivesense.

1-36. (canceled)
 37. An apparatus comprising: a plurality of transistorsegments arranged on a die, each transistor segment including: a pillarof a semiconductor material, the pillar including a drift region thatextends in a vertical direction from a top surface down to a substrate,the pillar having a loop shape that extends in first and second lateraldirections, the loop shape including a pair of substantially parallel,elongated straight sections connected at opposite ends by respectivefirst and second semi-circular sections; a first and second dielectricregions disposed on opposite sides of the pillar, respectively, thefirst dielectric region being laterally surrounded by the pillar, andthe second dielectric region laterally surrounding the pillar; first andsecond field plates respectively disposed in the first and seconddielectric regions; wherein the transistor segments are arranged into aplurality of sections, the sections being arranged into rows and columnsthat extend across first and second lateral directions, respectively, ofthe die, the transistor segments of each section being arranged in anorthogonal relationship relative to the transistor segments of anadjacent section in both the first and second directions.
 38. Theapparatus of claim 37 wherein the pillar further comprises a sourceregion disposed at or near the top surface, and a body region thatvertically separates the source region from the drift region.
 39. Theapparatus of claim 37 wherein the second dielectric region is terminatedat each end in the first lateral direction in a rounded end.
 40. Theapparatus of claim 37 wherein the first and second field plates arefully insulated from the extended drain region, the first field platebeing laterally surrounded by the pillar, and the second field platelaterally surrounding the pillar.
 41. The apparatus of claim 38 whereinthe drift region and the source region are a first conductivity type,and the body region is a second conductivity type.
 42. The apparatus ofclaim 41 wherein the substrate is the first conductivity type.
 43. Theapparatus of claim 38 further comprising a gate disposed within thefirst and second dielectric regions adjacent the body region, the gatebeing insulated from the body region and the first and second fieldplates.
 44. The apparatus of claim 37 wherein the plurality of sectionscomprise 2N sections, where N is an integer greater than or equal toone.
 45. The apparatus of claim 38 wherein the source comprises firstand second regions separated by a semiconductor region of an oppositeconductivity type.
 46. An apparatus comprising: a plurality oftransistor segments arranged on a die. each transistor segmentincluding: a pillar of a semiconductor material, the pillar including adrift region that extends in a vertical direction through the die, thepillar having a loop shape that extends in first and second lateraldirections, the loop shape including a pair of substantially parallel,elongated straight sections connected at opposite ends by respectivefirst and second semi-circular sections; a first and second dielectricregions disposed on opposite sides of the pillar, respectively, thefirst dielectric region being laterally surrounded by the pillar, andthe second dielectric region laterally surrounding the pillar; first andsecond field plates respectively disposed in the first and seconddielectric regions; wherein the transistor segments are arranged into aplurality of sections, each section comprising a set of transistorsegments arranged with the substantially parallel, elongated straightsections of each transistor segment being in a side-by-side relationshipwith the second dielectric region of each transistor segment beingmerged, the transistor segments of each section being arranged in anorthogonal relationship relative to the transistor segments of anadjacent section in both the first and second directions.
 47. Theapparatus of claim 46 wherein the sections extend laterallysubstantially across a width and a length of the die.
 48. The apparatusof claim 46 wherein the pillar further comprises a source regiondisposed near a top surface of the die, and a body region thatvertically separates the source region from the drift region.
 49. Theapparatus of claim 48 further comprising a gate disposed within thefirst and second dielectric regions adjacent the body region, the gatebeing insulated from the body region and the first and second fieldplates.